Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation
نویسندگان
چکیده
منابع مشابه
Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation
Related Articles Plasma treatments to improve metal contacts in graphene field effect transistor J. Appl. Phys. 110, 073305 (2011) Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors Appl. Phys. Lett. 99, 152102 (2011) Nonvolatile memory characteristics of organic thin film transistors using poly(2-hydroxyethyl methacrylate)-based polymer mult...
متن کاملConduction coefficient modeling in bilayer graphene based on schottky transistors
Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...
متن کاملGraphene field effect transistors for bioelectronic applications
The development of the future generation of neuroprosthetic devices will require the advancement of novel solid-state sensors with a further improvement in the signal detection capability, a superior stability in biological environments, and a more suitable compatibility with living tissue. Due to the maturity of Si technology, Si-based MOSFETs have been extensively used in previous decades for...
متن کاملA circuit model for defective bilayer graphene transistors
This paper investigates the behaviour of a defective single-gate bilayer graphene transistor. Point defects were introduced into pristine graphene crystal structure using a tightly focused helium ion beam. The transfer characteristics of the exposed transistors were measured ex-situ for different defect concentrations. The channel peak resistance increased with increasing defect concentration w...
متن کاملDynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors
Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields)...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2011
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3560921